Greater efficiency, greater power density, smaller size and lower system cost: This is the main advantage of silicon carbide (SiC) -based transistors. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) began mass production EASY 1B - Infineon's first fully silicon carbide module introduced in 2016 PCIM. At the 2017 PCIM show in Nuremberg, Infineon exhibited other module platforms and topologies for the 1200 V CoolSiC ™ MOSFET product family. Today, Infineon is better able to take advantage of silicon carbide technology.
"Silicon carbide has reached a turning point and has been cost-effective and has been used for different applications, but in order to make this new semiconductor technology a revolutionary technology that can be used," said Dr. Peter Wawer, president of Infineon's Industrial Power Control Division. , The need for partners such as Infineon.Application of tailored products for our products, our production capacity, a comprehensive understanding of the technology mix and system: these four advantages make us a leader in the power semiconductor market. Silicon product portfolio, we hope and be able to achieve this goal. "
The new 1200 V silicon carbide MOSFET has been optimized for both high reliability and performance advantages. The dynamic power loss is one order of magnitude lower than 1200V silicon (Si) IGBT. The first products will be the main push photovoltaic inverter, uninterruptible power supply (UPS) and charging / storage systems and other applications. The new models introduced in the near future will also create the conditions for a revolutionary solution for building auxiliary power supplies for industrial frequency converters, medical equipment or railway equipment.
1200 V SiC MOSEFT trench gate technology used in a major advantage is the durability of durable. This is due to its low working time failure (FIT) rate and effective short circuit capability, which can be adapted to different applications. Thanks to the 4 V threshold voltage (Vth) and the recommended on-threshold (VGS) of +15 V), these transistors can be controlled like IGBTs and safely shut down in the event of a fault. Silicon carbide MOSFETs enable high-speed switching, and Infineon's silicon carbide MOSFET technology can be used to change the switching speed by gate resistance adjustment, so you can easily optimize EMC performance. Such as how to use 74hc595 with arduino and how to reset atmega328p.
As early as last year, Infineon has launched the leading product EASY 1B (half bridge / Booster) and discrete devices TO-247-3pin and TO-247-4pin products. The EASY 1B platform is very mature and is an ideal platform for implementing fast switching devices. At this year's PCIM show, Infineon will showcase other module platforms and topologies based on 1200 V SiC MOSFET technology. They will gradually expand the performance range of CoolSiC MOSFET. Infineon's silicon carbide modules include:
• EASY 1B with B6 (Six-Pack) topology: The module features a mature Infineon module configuration with an on-resistance (RDS (ON)) of only 45 mΩ. The integrated body diode ensures low loss freewheeling. The EASY 1B is suitable for applications in the fields of transmission, solar or welding.
EASY 2B with half-bridge topology: This larger EASY device has enhanced performance with RDS (ON) of each switch of 8 mΩ. The low inductance module concept is ideal for applications with power exceeding 50 kW and fast switching applications such as solar inverters, fast charge systems or uninterruptible power solutions.
· 62 mm with half-bridge topology: additional half-bridge configuration with higher power, RDS (ON) per switching function of 6 mΩ. The module platform creates the conditions for a low-inductance connection for a medium power range system. This feature is suitable for many applications, including medical equipment or railway equipment, auxiliary power and so on. Due to the large number of potential applications, Infineon expects the module to be rapidly gaining popularity.
Supply
In 2016 PCIM launched the flagship product EASY 1B and two discrete devices TO-247-3pin and TO-247-4pin, this year will gradually begin mass production. The EASY 1B half-bridge configuration is now available. To support its market release, Infineon has introduced a variety of drive modules and demo boards, which are also available from now on. The new product model has been sampling and is scheduled to begin mass production in 2018. If you want to learn more information, please go to electronics-chip.com.
"Silicon carbide has reached a turning point and has been cost-effective and has been used for different applications, but in order to make this new semiconductor technology a revolutionary technology that can be used," said Dr. Peter Wawer, president of Infineon's Industrial Power Control Division. , The need for partners such as Infineon.Application of tailored products for our products, our production capacity, a comprehensive understanding of the technology mix and system: these four advantages make us a leader in the power semiconductor market. Silicon product portfolio, we hope and be able to achieve this goal. "
The new 1200 V silicon carbide MOSFET has been optimized for both high reliability and performance advantages. The dynamic power loss is one order of magnitude lower than 1200V silicon (Si) IGBT. The first products will be the main push photovoltaic inverter, uninterruptible power supply (UPS) and charging / storage systems and other applications. The new models introduced in the near future will also create the conditions for a revolutionary solution for building auxiliary power supplies for industrial frequency converters, medical equipment or railway equipment.
1200 V SiC MOSEFT trench gate technology used in a major advantage is the durability of durable. This is due to its low working time failure (FIT) rate and effective short circuit capability, which can be adapted to different applications. Thanks to the 4 V threshold voltage (Vth) and the recommended on-threshold (VGS) of +15 V), these transistors can be controlled like IGBTs and safely shut down in the event of a fault. Silicon carbide MOSFETs enable high-speed switching, and Infineon's silicon carbide MOSFET technology can be used to change the switching speed by gate resistance adjustment, so you can easily optimize EMC performance. Such as how to use 74hc595 with arduino and how to reset atmega328p.
As early as last year, Infineon has launched the leading product EASY 1B (half bridge / Booster) and discrete devices TO-247-3pin and TO-247-4pin products. The EASY 1B platform is very mature and is an ideal platform for implementing fast switching devices. At this year's PCIM show, Infineon will showcase other module platforms and topologies based on 1200 V SiC MOSFET technology. They will gradually expand the performance range of CoolSiC MOSFET. Infineon's silicon carbide modules include:
• EASY 1B with B6 (Six-Pack) topology: The module features a mature Infineon module configuration with an on-resistance (RDS (ON)) of only 45 mΩ. The integrated body diode ensures low loss freewheeling. The EASY 1B is suitable for applications in the fields of transmission, solar or welding.
EASY 2B with half-bridge topology: This larger EASY device has enhanced performance with RDS (ON) of each switch of 8 mΩ. The low inductance module concept is ideal for applications with power exceeding 50 kW and fast switching applications such as solar inverters, fast charge systems or uninterruptible power solutions.
· 62 mm with half-bridge topology: additional half-bridge configuration with higher power, RDS (ON) per switching function of 6 mΩ. The module platform creates the conditions for a low-inductance connection for a medium power range system. This feature is suitable for many applications, including medical equipment or railway equipment, auxiliary power and so on. Due to the large number of potential applications, Infineon expects the module to be rapidly gaining popularity.
Supply
In 2016 PCIM launched the flagship product EASY 1B and two discrete devices TO-247-3pin and TO-247-4pin, this year will gradually begin mass production. The EASY 1B half-bridge configuration is now available. To support its market release, Infineon has introduced a variety of drive modules and demo boards, which are also available from now on. The new product model has been sampling and is scheduled to begin mass production in 2018. If you want to learn more information, please go to electronics-chip.com.